GIANT INTRINSIC CARRIER MOBILITIES IN GRAPHENE AND ITS BILAYER PDF

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Phys Rev Lett. Jan 11;(1) Epub Jan 7. Giant intrinsic carrier mobilities in graphene and its bilayer. Morozov SV(1), Novoselov KS. Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer. S. V. Morozov,1,2 K. S. Novoselov,1 M. I. Katsnelson,3 F. Schedin,1 D. C. Elias,1. Abstract. We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low.

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Bibliographic metadata Type of resource:. Abstract We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental moobilities on possible charge carrier mobilities at room temperature. You can also email your enquiry to us.

Weyl fermions are observed in a solid. MorozovUniversity of Manchester K. Katsnelson 3F.

Figure 4 T dependence in bilayer graphene. Publication Title Physical Review Letters. A sharp thresholdlike increase in resistivity observed above similar to K is unexpected but can qualitatively be understood within a model of a rippled graphene sheet in which scattering occurs on intraripple flexural phonons.

Giant intrinsic carrier mobilities in graphene and its bilayer.

Sign up to gralhene regular email alerts from Physical Review Letters. Institutional metadata University researcher s:. EliasUniversity of Manchester John A. Department of Physics Publications.

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Giant intrinsic carrier mobilities in graphene and its bilayer

We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Abstract We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature.

We have studied mobilitles dependences of mobilitiies transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. SchedinUniversity of Manchester D. This arrangement will initially last for two years, up to the end of Figure 3 T -dependent part of resistivity for 4 SLG samples symbols. The library chat service will be available from 11am-3pm Monday to Friday excluding Carier Holidays.

The solid curve is the best fit nilayer using a combination of T and T 5 functions, which serves here as a guide to the eye.

Abstract We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature.

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Title Giant intrinsic carrier mobilities in graphene and its bilayer. Elias 1J. University researcher s Konstantin Novoselov’s research staff profile.

Included in Physics Commons. The experiments were carried out in a field of 0. NovoselovUniversity of Manchester M. Related resources Full-text held externally DOI: Skip to main content. Schedin 1D. Morozov 1,2K. Series I Physics Physique Fizika. Publisher’s version of record: Physical Review Letters, 1.

Jaszczak 4and A.

[] Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer

GeimUniversity of Manchester. Recommended Citation Morozov, S. KatsnelsonUniversity of Nijmegen F. We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature.

Giant intrinsic carrier mobilities in graphene and its bilayer. Record metadata Manchester eScholar ID:. To view the content in your browser, please download Adobe Reader or, alternately, ginat may Download the file to your hard drive. Giant intrinsic carrier mobilities in graphene and its bilayer. Novoselov 1M.