BU2520AX DATASHEET PDF
isc website： 1 isc Silicon NPN Power Transistor. BUAX. DESCRIPTION. ·Collector-Emitter Sustaining Voltage VCEO(SUS)= V (Min ). BUAX BUAX; Silicon Diffused Power Transistor;; Package: SOT ( TOP-3D). Details, datasheet, quote on part number: BUAX. BUAX datasheet, BUAX circuit, BUAX data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site for.
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Mounted with heatsink compound. How long will receive a response. Product specification This data sheet contains final product specifications. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Switching times waveforms 32 kHz. These are stress ratings only and dahasheet of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.
September 7 Rev 2. Switching times waveforms 16 kHz. Refer to mounting instructions for F-pack envelopes. No liability will be accepted by the publisher for any consequence datasbeet its use.
BUAX Datasheet PDF –
September 6 Rev 2. Oscilloscope display for VCEOsust. September 8 Rev 2. New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
Click here to Download. Exposure to limiting values for extended periods may affect device reliability. Switching times test circuit. September datasgeet Rev 2. Forward bias safe operating area. Cfb -VBB t Fig.
Collector to emitter voltage Collector to emitter voltage open base Collector current DC Collector current peak value Base current DC Base current peak value Reverse base current Reverse base current peak value1 Total power dissipation Storage temperature Junction temperature.
Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. September 1 Rev ub2520ax.
BU2520AX – Silicon Diffused Power Transistor
Typical collector storage and fall time. Application information Where application information is given, it is advisory and does not form part of the specification. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or bu22520ax.
September 2 Rev 2. UNIT – – 1. New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers bu252a0x to 32 kHz.
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BUAX 데이터시트(PDF) – NXP Semiconductors
Test circuit for VCEOsust. Stress above one or more of the limiting values may cause permanent damage to the device. Typical DC current gain.
Typical base-emitter saturation voltage. SOT; The seating plane is electrically isolated from all terminals. New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers.
Dataxheet collector-emitter saturation voltage.